Datasheet H6NA80FI Equivalent ( PDF )

® STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247, ISOWATT218 FAST POWER MOS TRANSISTOR TYPE V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5.4 A 3.4 A STW 6NA80 STH6NA80FI s s s s s s s TYPICAL RDS(on) = 1.8 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATI

OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS co

® STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247, ISOWATT218 FAST POWER MOS TRANSISTOR TYPE V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5.4 A 3.4 A STW 6NA80 STH6NA80FI s s s s s s s TYPICAL RDS(on) = 1.8 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVAL