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Datasheet GTVA221701FA Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GTVA221701FA | Thermally-Enhanced High Power RF GaN HEMT advance specification
GTVA221701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz
Description
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It feat |
Infineon |
GTVA22170 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GTVA221701FA | Thermally-Enhanced High Power RF GaN HEMT |
Infineon |
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