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Datasheet GT40M301 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40M301 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR GT40M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.)
l Low Saturati |
Toshiba Semiconductor |
GT40M Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40M101 | SILICON N−CHANNEL IGBT |
Toshiba Semiconductor |
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GT40M301 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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