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Datasheet GT40G121 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | GT40G121 | Insulated Gate Bipolar Transistor GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
· · ·
Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Max |
 Toshiba Semiconductor |
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GT40G Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| GT40G121 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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