Datasheet GT3585 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT3585	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all	GTM

GT3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT30J126	Silicon N-Channel IGBT GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eo	Toshiba
GT30J122	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING Datasheet.es GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE	Toshiba Semiconductor
GT35J321	Fourth Generation IGBT GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (s	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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