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Toshiba GT30J122(Q)
Trans IGBT Chip N-CH 600V 30A 75000mW 3-Pin(3+Tab) TO-3P(N)IS
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Datasheet GT30J122 Equivalent ( PDF ) - IGBT

P/N Descripción Fabr. PDF
GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collect
 		Toshiba Semiconductor Toshiba Semiconductor GT30J122 datasheet
GT30J122A Silicon N-Channel IGBT

GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications The product(s) described herein should not be used for any other application. Note: 2. Features (1) (2) (3) (4) 4th generation Enhancement mode High-speed switching : tf = 0.20 s (typ.
 		Toshiba Toshiba GT30J122A datasheet



GT30 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N Descripción Fabr. PDF
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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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