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GT30J122A PDF File ( Datasheet )

Toshiba
GT30J122A
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel

PDF Datasheet
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GT30J122A Description
Silicon N-Channel IGBT

GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications The product(s) described herein should not be used for any other application. Note: 2. Features (1) (2) (3) (4) 4th generation Enhancement mode High-speed switching : tf = 0.20 s (typ.) (IC = 50 A) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) 3. Packaging and Interna
Toshiba
Toshiba



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