|
|
Datasheet GT10Q101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT10Q101 | High Power Switching Applications GT10Q101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25° |
Toshiba Semiconductor |
GT10Q Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT10Q301 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
|
GT10Q101 | High Power Switching Applications |
Toshiba Semiconductor |
|
GT10Q311 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del GT10Q101. Si pulsa el resultado de búsqueda de GT10Q101 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |