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Harris FSYC9055D1
Power Field-Effect Transistor, 59A I(D), 60V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Datasheet FSYC9055D Equivalent ( PDF ) - MOSFET

P/N Descripción Fabr. PDF
FSYC9055D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYC9055D, FSYC9055R July 1999 Features Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced P
Intersil Corporation Intersil Corporation FSYC9055D datasheet
FSYC9055D1 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYC9055D, FSYC9055R July 1999 Features Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced P
Intersil Corporation Intersil Corporation FSYC9055D1 datasheet
FSYC9055D3 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYC9055D, FSYC9055R July 1999 Features Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced P
Intersil Corporation Intersil Corporation FSYC9055D3 datasheet



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