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| FSYC9055D1 Description |
| Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSYC9055D, FSYC9055R
July 1999
Features
Total Dose
UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular,
Intersil Corporation |
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FSYC360R4 | FSYC160R1 FSYA254R | FSYE913A0D1 FSYC9160D1 | FSYC163R3 |
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