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FSYC9055D1 PDF File ( Datasheet )

Harris
FSYC9055D1
Power Field-Effect Transistor, 59A I(D), 60V, 0.027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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FSYC9055D1 Description
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYC9055D, FSYC9055R July 1999 Features Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular,

Intersil Corporation
Intersil Corporation




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