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Descripción |
Fabr. |
PDF |
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FSYA254R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA254D, FSYA254R
Data Sheet March 1999 File Number
4677
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com
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FSYA254R1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA254D, FSYA254R
Data Sheet March 1999 File Number
4677
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com
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FSYA254R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA254D, FSYA254R
Data Sheet March 1999 File Number
4677
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com
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|
FSYA254R4 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA254D, FSYA254R
Data Sheet March 1999 File Number
4677
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is com
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