onsemi FDMC2610

N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ

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Datasheet FDMC2610 Equivalent ( PDF ) - MOSFET

P/N	Descripción	Fabr.	PDF
FDMC2610	N-Channel UltraFET Trench MOSFET FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS =

FDMC Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N	Descripción	Fabr.	PDF
FDMC2674	N-Channel UltraFET Trench MOSFET
FDMC3300NZA	Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
FDMC5614P	P-Channel PowerTrench MOSFET
FDMC2523P	P-Channel QFET
FDMC6890NZ	Dual N-Channel PowerTrench MOSFET
FDS4835	P-Channel 30-V (D-S) MOSFET
FDC37B80X	Enhanced Super I/O Controller

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P/N	Descripción	Fabr.	PDF
2N3904	NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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