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FDMC2610 PDF File ( Datasheet )

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FDMC2610
N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ

PDF Datasheet
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FDMC2610 Description
N-Channel UltraFET Trench MOSFET

FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm RoHS Compliant tm Application D
Fairchild Semiconductor
Fairchild Semiconductor



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