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Datasheet DB-4 Equivalent ( PDF ) - Diode |
| P/N | Descripción | Fabr. | |
| DB-4 | Bi-directional trigger diodes LESHAN RADIO COMPANY, LTD.
Bi-directional trigger diodes
. 500mW DO-35 . Glass silicon . We declare that the material of product compliance with RoHS requirements.
DB-4
Product Characteristic
± V
I = IBO toIF=10mA
1.5
S
Limiting Values
1, 3
LESHAN RADIO COMPANY, LTD.
Characteristic Curves
Current-voltage characterisitics
+IF
Test circuit see diagram 2 Adjust R for I=0.5A
IP 90%
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| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor
DB-499D-470
RF power amplifier using 1 x START499D NPN RF silicon transistor
Preliminary Data
Features
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Excellent thermal stability Frequency: 430 - 470 MH- Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficiency: 52 % BeO free amplifier
Mechanical specification: L = 60 mm, W = 30 mm
".W
Description
The DB-499D-470 is a NPN silicon RF power amplifier designed for
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DB-4 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor
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| DBXLH-6565B-VTM | Multiband Antenna, 824–960 and 1710–2180 MHz
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| DB1S550 | Photo Interrupter
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| Esta página es del resultado de búsqueda del DB-4. Si pulsa el resultado de búsqueda de DB-4 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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