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| DB-4 Description |
| Bi-directional trigger diodes
LESHAN RADIO COMPANY, LTD.
Bi-directional trigger diodes
. 500mW DO-35 . Glass silicon . We declare that the material of product compliance with RoHS requirements.
DB-4
Product Characteristic
± V
I = IBO toIF=10mA
1.5
S
Limiting Values
1, 3
LESHAN RADIO COMPANY, LTD.
Characteristic Curves
Current-voltage characterisitics
+IF
Test circuit see diagram 2 Adjust R for I=0.5A
IP 90%
10 mA
-v
IBO IB 0.5v
BO
+v
10%
V VBO
tr
-IF
Power dissipation versus ambient temperature (maxi
Leshan Radio Company |
| RF power amplifier using 1 x START499D NPN RF silicon transistor
DB-499D-470
RF power amplifier using 1 x START499D NPN RF silicon transistor
Preliminary Data
Features
- - - - - - -
Excellent thermal stability Frequency: 430 - 470 MH- Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficiency: 52 % BeO free amplifier
Mechanical specification: L = 60 mm, W = 30 mm
".W
Description
The DB-499D-470 is a NPN silicon RF power amplifier designed for UHF 2-way radio applications Table 1.
Device summary
Order codes DB-499D-470
February 2009
Rev 1
ST Microelectronics |
| Related Part Number |
DB-54008L-406 | DB-55008L-318 DB-55035S-175 | DB-CE110 DB-54003L-512 | DB-55003L-175 |
| DataSheet.es | 2020 | Contacto |