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Datasheet CS2N80A3HY Equivalent ( PDF )

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1 CS2N80A3HY   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N80 A3HY ○R General Description: VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.8 Ω per
Huajing Microelectronics
Huajing Microelectronics
datasheet CS2N80A3HY pdf

CS2N80A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS2N80A3HY

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N80 A3HY ○R General Description: VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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