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Datasheet CS2N65A3HY Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS2N65A3HY   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N65 A3HY ○R General Description： VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω perfor
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS2N65A3HY pdf

CS2N65A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS2N65A4HY

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N65 A4HY ○R General Description： CS2N65 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS2N65A8

Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon N-Channel Power MOSFET General Description： CS2N65 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
 HUAJING
HUAJING		 datasheet pdf - HUAJING
CS2N65A3HY

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS2N65 A3HY ○R General Description： VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

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