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Datasheet CM8600A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CM8600A3 Watt Audio Power Amplifier

CM8600A 3 Watt Audio Power Amplifier with Selectable Shutdown Logic Level General Description The CM8600 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of delivering 1.25 watts of continuo
ccmic
ccmic
amplifier


CM8 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1CM800DU-12HDual IGBTMOD 800 Amperes/600 Volts

CM800DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts A "R" (4 PLACES) E F G H G2 J E2 C2E1 E2 B E K E1 L M G1 C1 J "T" (4 PLACES) N "S" (3 PLACES) Q P D C Description: Powerex IGBTMOD™ Mo
Powerex Power Semiconductors
Powerex Power Semiconductors
datasheet CM800DU-12H pdf
2CM800DZ-34HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZ-34H q IC ................................................................... 800A q VCES ..............................................
Powerex Power Semiconductors
Powerex Power Semiconductors
datasheet CM800DZ-34H pdf
3CM800DZ-34HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H q IC ................................................................... 800A q VCES .........................
Mitsubishi Electric
Mitsubishi Electric
datasheet CM800DZ-34H pdf
4CM800E2C-66H2nd-Version HVIGBT Modules

MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H q IC ................................................................... 800A q VCES .......................
Mitsubishi Electric
Mitsubishi Electric
datasheet CM800E2C-66H pdf
5CM800E2Z-66HHIGH POWER SWITCHING USE

MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H q IC ................................................................... 800A q VCES .......................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
datasheet CM800E2Z-66H pdf
6CM800E6C-66HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC ................................................................... 800A q VCES .......................
Mitsubishi Electric
Mitsubishi Electric
datasheet CM800E6C-66H pdf
7CM800HA-24HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of on
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
datasheet CM800HA-24H pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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