Datasheet CGHV1J006D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CGHV1J006D	GaN HEMT Die CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency featur	Cree

CGHV1J0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CGHV1J006D	GaN HEMT Die CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, hi	Cree

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Número de pieza	Descripción	Fabricantes	PDF
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