Datasheet C535 Equivalent ( PDF ) - Transistor

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dis

2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage

Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications

2SC5354 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A) High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltag

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage