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| C5355 Description |
| NPN Transistor, 2SC5355
2SC5355
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5355
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissi
Toshiba Semiconductor |
| Related Part Number |
C535 | C535A-WJN C5343 | C5356 C5375 | C5303 |
| DataSheet.es | 2020 | Contacto |