Datasheet C503 Equivalent ( PDF ) - LED

2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.3 W Maximum Ratings (Ta = 25°C) C

Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one scr

Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one scr

® WON-TOP ELECTRONICS Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX C5020, C5024, C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE Pb D Anode + C E Mechanical Data B C50 Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode Dim Min Max A 7.55 B 6.55 Side, Add