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| C5030 Description |
| NPN Transistor, 2SC5030
2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 1.3 W
Maximum Ratings (Ta = 25°C)
Characteristics Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage DC I Collect
Toshiba Semiconductor |
| Related Part Number |
C503B-AAN | C503B-RAS C503C-WAS | C503B-ACN C503B-RCS | C5057 |
| DataSheet.es | 2020 | Contacto |