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Datasheet BUZ32 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | BUZ32 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 32
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 32
VDS
200 V
ID
9.5 A
RDS(on)
0.4 Ω
Package TO-220 AB
Ordering Code C67078-S1310-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 9.5 Unit A
ID |
 Siemens Semiconductor Group |
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| 10 | BUZ32 | 9.5A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFET BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
• 9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as • S |
 Intersil Corporation |
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| 9 | BUZ32 | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 32
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 32
200 V
9.5 A
0.4 Ω
TO-220 AB
C67078-S1310-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
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 Infineon Technologies AG |
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| 8 | BUZ323 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 323
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 323
VDS
400 V
ID
15 A
RDS(on)
0.3 Ω
Package TO-218 AA
Ordering Code C67078-S3127-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 15 Unit A
ID |
Siemens Semiconductor Group |
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