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PDF BUZ32 Data sheet ( Hoja de datos )
| Número de pieza | BUZ32 | |
| Descripción | 9.5A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ32 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Semiconductor
Data Sheet
BUZ32
October 1998 File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ32)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(9.5A, relay drivers, and drivers for high power bipolar switching
• 9.5A, 200V
• rDS(ON) = 0.400Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
200V, transistors requiring high speed and low gate drive power.
0.400 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA17412.
Channel
Power Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ32
TO-220AB
BRAND
BUZ32
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author NOTE: When ordering, use the entire part number.
Symbol
()
/Key-
D
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power Packaging
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
/Creator
SOURCE
DRAIN
GATE
() DRAIN (FLANGE)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page  
BUZ32
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 14.3A
101
TJ = 150oC
TJ = 25oC
100
10
5
VDS = 40V
VDS = 160V
10-1
0
0.5 1.0 1.5 2.0 2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
00 10 20 30 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
5
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BUZ32.PDF ] | |
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