Datasheet BUK7Y25-80E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BUK7Y25-80E	MOSFET ( Transistor ) LF BUK7Y25-80E 8 May 2013 PA K 56 N-channel 80 V, 25 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard fo	NXP Semiconductors

BUK7Y25- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BUK7Y25-80E	MOSFET ( Transistor ) LF BUK7Y25-80E 8 May 2013 PA K 56 N-channel 80 V, 25 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to	NXP Semiconductors
BUK7Y25-60E	N-channel 60V 25m ohm standard level MOSFET LF BUK7Y25-60E 7 May 2013 PA K 56 N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to	NXP Semiconductors
BUK7Y25-40B	N-channel TrenchMOS standard level FET BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) Tren	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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