Datasheet BUK7510-30 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BUK7510-30	TrenchMOS transistor Standard level FET Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral	NXP Semiconductors

BUK7510 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BUK7510-55AL	N-channel TrenchMOS standard level FET BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 02 — 3 January 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpo	NXP Semiconductors
BUK7510-100B	TrenchMOS standard level FET BUK75/7610-100B TrenchMOS™ standard level FET Rev. 02 — 19 September 2002 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Produc	NXP Semiconductors
BUK7510-30	TrenchMOS transistor Standard level FET Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resista	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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