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Datasheet BSH102 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BSH102 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH102 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08
Philips Semiconductors
Product specification
N-channel enhancement mode MOS |  NXP Semiconductors | transistor |
BSH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSH101 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH101 N-channel enhancement mode MOS transistor
Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19
Philips Semiconductors
Product specification
N-channel enhancement mode MOS tr NXP Semiconductors transistor | | |
| 2 | BSH102 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH102 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08
Philips Semiconductors
Product specification
N-channel enhancement mode MOS NXP Semiconductors transistor | | |
| 3 | BSH103 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11
Philips Semiconductors
Product specification
N-channel enhancement mode MOS NXP Semiconductors transistor | | |
| 4 | BSH104 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSH104 N-channel enhancement mode MOS transistor
Objective specification File under Discrete Semiconductors, SC13b 1997 Nov 26
Philips Semiconductors
Objective specification
N-channel enhancement mode MOS transistor
FEATURES • High-s NXP Semiconductors transistor | | |
| 5 | BSH105 | N-channel enhancement mode MOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
• Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
BSH105
SYMBOL
d
QUICK REFERENCE DATA
VDS = 20 V ID = 1.05 A
g
RDS(ON) ≤ 250 mΩ NXP Semiconductors transistor | | |
| 6 | BSH106 | N-channel enhancement mode MOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
• Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
BSH106
SYMBOL
d
QUICK REFERENCE DATA
VDS = 20 V ID = 1.05 A
g
RDS(ON) ≤ 250 mΩ NXP Semiconductors transistor | | |
| 7 | BSH107 | N-channel enhancement mode MOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
• Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
BSH107
SYMBOL
d
QUICK REFERENCE DATA
VDS = 20 V ID = 1.75 A
g
RDS(ON) ≤ 90 mΩ NXP Semiconductors transistor | | |
| 8 | BSH108 | N-channel enhancement mode field-effect transistor BSH108
N-channel enhancement mode field-effect transistor
Rev. 02 — 25 October 2000
M3D088
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23.
2. Features
s s s s T NXP Semiconductors transistor | | |
| 9 | BSH111 | N-channel enhancement mode field-effect transistor BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23.
2. Features
s s s s TrenchMOS™ t NXP Semiconductors transistor | |
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