Datasheet ASI1N23WE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ASI1N23WE	SILICON MIXER DIODE 1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA	Advanced Semiconductor

ASI1N2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ASI1N23WE	SILICON MIXER DIODE 1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDIS	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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