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Datasheet APT50GN60B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | APT50GN60B | Resonant Mode Combi IGBT TYPICAL PERFORMANCE CURVES
APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequenc | Microsemi | igbt |
2 | APT50GN60B | IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ®
APT50GN60B APT50GN60BG*
APT50GN60B(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that req | Advanced Power Technology | igbt |
3 | APT50GN60BDQ2 | Resonant Mode Combi IGBT TYPICAL PERFORMANCE CURVES
APT50GN60BDQ2 APT50GN60BD_SDQ2(G) APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal | Microsemi | igbt |
4 | APT50GN60BDQ2 | IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ®
APT50GN60BDQ2 APT50GN60BDQ2G*
APT50GN60BDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications | Advanced Power Technology | igbt |
5 | APT50GN60BDQ2G | Resonant Mode Combi IGBT TYPICAL PERFORMANCE CURVES
APT50GN60BDQ2 APT50GN60BD_SDQ2(G) APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal | Microsemi | igbt |
6 | APT50GN60BDQ2G | IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ®
APT50GN60BDQ2 APT50GN60BDQ2G*
APT50GN60BDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications | Advanced Power Technology | igbt |
7 | APT50GN60BG | Resonant Mode Combi IGBT TYPICAL PERFORMANCE CURVES
APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequenc | Microsemi | igbt |
8 | APT50GN60BG | IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ®
APT50GN60B APT50GN60BG*
APT50GN60B(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that req | Advanced Power Technology | igbt |
APT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | APT05DC120HJ | SiC Diode Full Bridge Power Module APT05DC120HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 1200V IC = 5A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Te Microsemi diode | | |
2 | APT06DC60HJ | SiC Diode Full Bridge Power Module APT06DC60HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 600V IC = 6A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temp Microsemi diode | | |
3 | APT1001 | Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology mosfet | | |
4 | APT1001 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology mosfet | | |
5 | APT1001R1AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT1001R1AVR
1000V 9A 1.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throu Advanced Power Technology mosfet | | |
6 | APT1001R1BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M Advanced Power Technology mosfet | | |
7 | APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1BVFR
1000V 11A 1.100Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi Advanced Power Technology mosfet | | |
8 | APT1001R1HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1HVR
1000V 9A 1.100Ω
POWER MOS V ®
TO-258
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds t Advanced Power Technology mosfet | | |
9 | APT1001R3BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M Advanced Power Technology mosfet | |
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