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APT50GN60BDQ2 Buy Now and Stock Informations |
APT50GN60BDQ2 Electronic Components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | APT50GN60BDQ2 | Resonant Mode Combi IGBT Microsemi igbt | | |
| 2 | APT50GN60BDQ2 | IGBT, Insulated Gate Bipolar Transistor Advanced Power Technology igbt | |
PDF APT50GN60BDQ2 Data sheet ( Hoja de datos )
Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | APT5010B2LC | high voltage N-Channel enhancement mode power MOSFET Advanced Power Technology mosfet | | |
| 2 | APT5010B2LL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Advanced Power Technology mosfet | | |
| 3 | APT5010B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology mosfet | | |
| 4 | APT5010B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology mosfet | |
Featured electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | APT50GN60BDQ2 | Resonant Mode Combi IGBT TYPICAL PERFORMANCE CURVES
APT50GN60BDQ2 APT50GN60BD_SDQ2(G) APT50GN60SDQ2 APT50GN60BDQ2(G) APT50GN60SDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing th Microsemi igbt | | |
| 2 | APT50GN60BDQ2 | IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ®
APT50GN60BDQ2 APT50GN60BDQ2G*
APT50GN60BDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Advanced Power Technology igbt | | |
| 3 | APT50GN60BDQ2G | Resonant Mode Combi IGBT Microsemi igbt | | |
| 4 | APT50GN60BDQ2G | IGBT, Insulated Gate Bipolar Transistor Advanced Power Technology igbt | |
| Esta es una página para buscar información de compra e inventario para APT50GN60BDQ2. Para productos compatibles y de reemplazo con APT50GN60BDQ2, descargue la hoja de datos para obtener más detalles. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended. On special request |
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