Datasheet 2SK3653B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK3653B	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3653B is suitable for converter of ECM. General-purpose product. 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 –0	NEC

2SK36 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK3665	N-Channel Enhancement Mode MOSFET	Panasonic
2SK3683	Fuji Power MOSFET SuperFAP-G series Target Specification PRELIM INARY 2SK3683-01MR (500V/0.38Ω/19A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Di	Fuji Electric
2SK364	Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK364 Unit: mm · High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −3	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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