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PDF 2SK3665 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3665 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Silicon MOSFET
2SK3665
N-channel enhancement mode MOSFET
High speed switching
20.0±0.5
φ 3.3±0.2
Unit : mm
5.0±0.3
(3.0)
Absolute Maximum Ratings
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability *1
Allowable power Tc = 25 °C *2
dissipation
Ta = 25 °C *3
Junction temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
EAS
PD
PD
Tj
Tstg
Rating
200
30
30
120
1800
180
3
150
-55 to +150
Unit
V
V
A
A
mJ
W
W
°C
°C
*1 : Guarantee of single pulse avalanche energy.
(L = 2mH, IL = 30A, VDD = 100V, 1pulse, Ta = 25 °C )
*2 : Tc = 25 °C
*3 : Ta = 25 °C (Without heat sink )
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
TOP-3L
D
G
S
Electrical Characteristics (Tc = 25 ± 3 °C)
Parameter
Symbol
Condition
Min Typ Max Unit
Drain Cutoff Current
IDSS VDS = 160V, VGS = 0
− − 100 µ A
Gate-source Leakage Current
IGSS VGS = ± 30 V, VDS = 0
− − ±1 µA
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0
200 − − V
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Vth
RDS (on)
Yfs
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 15 A
VDS = 25 V, ID = 15 A
1.5 − 3.5 V
− 50 68 m Ω
8 16 − S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss VDS = 25 V, VGS = 0,
Crss f = 1MHz
−
3170
−
− 440 −
− 35 −
pF
pF
pF
Turn-on delay time
Rise time
td (on)
−
36 −
ns
tr VDD = 100V, ID = 15 A
−
42 −
ns
Turn-off delay time
td (off) RL = 6.7 Ω, VGS = 10 V
−
230 −
ns
Fall time
tf
−
50 −
ns
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3665.PDF ] | |
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