Datasheet 2SK3230B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK3230B	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230B is suitable for converter of ECM. General-purpose product. PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1–0.05 +	NEC

2SK32 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK3264-01MR	MOS-FET N-Channel enhanced 2SK3264-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof FUJI POWER MOS-FET TO-220F15 2.54 Applications Switching regulators UPS	Fuji
2SK3235	Silicon N-Channel MOS FET To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporat	Renesas
2SK3271-01	N-channel MOS-FET 2SK3271-01 Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±100A 155W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > M	Fuji Electric

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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