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PDF 2SK3235 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3235 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3235 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Electrical Characteristics (Ta = 25°C)
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Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 500
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
I GSS
I DSS
VGS(off)
RDS(on)
—
—
3.0
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
8.5
—
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Body-drain diode forward
voltage
VDF —
Body-drain diode reverse trr —
recovery time
Body-drain diode reverse
recovery charge
Qrr —
Note: 4. Pulse test
Typ
—
—
—
—
0.3
14
1920
220
30
35
30
120
50
48
10
24
0.85
500
20
Max
—
±0.1
1
4.0
0.4
—
—
—
—
—
—
—
—
—
—
—
1.3
—
—
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
2SK3235
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 500 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 7.5 A, VGS = 10 V Note4
ID = 7.5 A, VDS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 7.5 A
VGS = 10 V
RL = 33.3 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 15 A
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/dt = 100 A/µs
3
5 Page 
Package Dimensions
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15.6 ± 0.3
φ3.2 ± 0.2
2SK3235
4.8 ± 0.2
1.5
As of January, 2001
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-3P
—
Conforms
5.0 g
9
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 2SK3235.PDF ] | |
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