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PDF 2SK3233 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3233 | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3233 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK3233
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1369 (Z)
1st. Edition
Mar. 2001
Features
• Low on-resistance: RDS(on) = 1.1 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
• Avalanche ratings
Outline
TO–220CFM
D
G
123
1. Gate
2. Drain
3. Source
S
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
Pulse Test
16
12
8 ID=5A
4
2A
1A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
2SK3233
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2 VGS = 10 V, 15 V
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20
Drain Current ID (A)
50
Static Drain to Source on State Resistance
vs. Temperature
5
Pulse Test
4 V GS = 10 V
3 ID=5A
2
2A
1 1A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10 Tc = –25°C
5
2 25°C
1 75°C
0.5
0.2
0.1
0.1 0.2
0.5 1 2
Drain Current
V DS = 10 V
Pulse Test
5 10 20 50
ID (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SK3233.PDF ] | |
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