Datasheet 2SK1881-S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK1881-S	N-channel MOS-FET 2SK1881-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,07Ω 20A 45W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratin	Fuji Electric

2SK188 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK1881-S	N-channel MOS-FET 2SK1881-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,07Ω 20A 45W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC convert	Fuji Electric
2SK1881-L	N-channel MOS-FET 2SK1881-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,07Ω 20A 45W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC convert	Fuji Electric
2SK1880	Silicon N-Channel MOS FET 2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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