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Datasheet 2SK163 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 2SK163 | Silicon N-Channel MOS FET 2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gat |
 Hitachi Semiconductor |
 |
| 13 | 2SK163 | Silicon N-Channel MOS FET 2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gat |
Hitachi Semiconductor |
|
| 12 | 2SK1630 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1630
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=700V(Min)
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, convert |
 Inchange Semiconductor |
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| 11 | 2SK1631 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1631
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=700V(Min)
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, convert |
Inchange Semiconductor |
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