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Número de pieza | 2SK163 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK163 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
4 ID = 15 A
10 A
2 5A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
VGS = 10 V
0.8
0.6
ID = 15 A
10 A
0.4
5A
0.2
0
–40
0 40 80 120
Case Temperature TC (°C)
160
2SK1636(L), 2SK1636(S)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5 VGS = 10 V
0.2 15 V
0.1
0.05
1
2 5 10 20 50 100
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
Pulse Test
20
TC = –25°C
10
25°C
5 75°C
2
1
0.5
0.5
12
5 10 20
Drain Current ID (A)
50
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK163.PDF ] |
Número de pieza | Descripción | Fabricantes |
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