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Datasheet 2SH14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SH14 | Silicon N-Channel IGBT ADE–208–287 (Z)
2SH14 Silicon N-Channel IGBT
1st. Editon Feb. 1995 Application
TO–3P
High speed power switching
Features
• High speed switching • Low on saturation voltage
1 2
3
1
2
3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to e |  Hitachi Semiconductor | igbt |
2SH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SH11 | Silicon N-Channel IGBT ADE–208–274 (Z)
2SH11 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
TO–220AB
High speed power switching
Features
2
• High speed switching • Low on saturation voltage
1
1 3 2 3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to Hitachi Semiconductor igbt | | |
| 2 | 2SH12 | Silicon N-Channel IGBT ADE–208–275 (Z)
2SH12 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
High speed power switching
TO–220AB
Features
• High speed switching • Low on saturation voltage
1 2
1 3 2 3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to e Hitachi Semiconductor igbt | | |
| 3 | 2SH13 | Silicon N-Channel IGBT ADE–208–286 (Z)
2SH13 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
High speed power switching
TO–220AB
Features
• High speed switching • Low on saturation voltage
1 2
1 3 2 3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to e Hitachi Semiconductor igbt | | |
| 4 | 2SH14 | Silicon N-Channel IGBT ADE–208–287 (Z)
2SH14 Silicon N-Channel IGBT
1st. Editon Feb. 1995 Application
TO–3P
High speed power switching
Features
• High speed switching • Low on saturation voltage
1 2
3
1
2
3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to e Hitachi Semiconductor igbt | | |
| 5 | 2SH15 | Silicon N-Channel IGBT ADE–208–288 (Z)
2SH15 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
High speed power switching
TO–3P
Features
• High speed switching • Low on saturation voltage
1 2
3
1
2
3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to e Hitachi Semiconductor igbt | | |
| 6 | 2SH16 | Silicon N-Channel IGBT ADE–208–289 (Z)
2SH16 Silicon N-Channel IGBT
1st. Edition Nov. 1994 Application
High speed power switching
TO–3PL
Features
2
• High speed switching • Low on saturation voltage
1
3
1
2
1. Gate 2. Collector 3. Emitter 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector t Hitachi Semiconductor igbt | | |
| 7 | 2SH17 | Silicon N-Channel IGBT ADE–208–290 (Z)
2SH17 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
TO–220AB
High speed power switching
Features
2
• High speed switching • Low on saturation voltage
1
1 3 2 3
1. Gate 2. Collector 3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Collector to Hitachi Semiconductor igbt | |
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