Datasheet 2SD669 Equivalent ( PDF ) - Transistor

· High breakdown voltage VCEO: 120V · High current 1.5A · Low saturation voltage,excellent hFE linearity

2SD669, 2SD669A NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage , Temperature Symbol VCBO VCEO V EBO IC PD Tj Tstg 2SD669 180 120 5.0 1.5 1.0 150 -55 to +150 2SD669A 180

UNISONIC TECHNOLOGIES CO., LTD 2SD669, A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-223 NPN SILICON TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649, A 1 TO-92 1 TO-92NL 1 TO-126C 1 TO-126 1 TO-251 1 TO-252 *Pb-free plating product number: 2SD669L, 2SD669AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD669-x-AA3-R 2SD

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB649, 649A ·High breakdown voltage VCEO:120, 160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Ba

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TRANSISTOR (NPN) TO-126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649, A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ BDTICTstg Parameter Collector- Base Voltage Collector-Emitter Voltage 2SD669 2SD669A