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Descripción |
Fabr. |
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2SD602 |
Silicon NPN epitaxial planer type
Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB710 and 2SB710A
Unit: mm
s Features
q q
2.8 0.3 0.65±0.15
+0.2
2.9 0.05
1.9±0.2
+0.2
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
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Silicon NPN transistor
2SD602(A)
Rev.E Mar.-2016
DATA SHEET
描述 , Descriptions
SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 , Features
2SB710(A)互 。 Complementary pair with 2SB710(A)。
用途 , Applications 用于普通功率放大。 General power amplifier applications.
部等效 路 , Equivalent Circuit
引脚排列 , Pinning
3
2 1
PIN1:Em
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NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
2SD602 , 2SD602A
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
Low collector to emitter saturation voltage VCE(sat)
CLASSIFICATION OF hFE (1)
Product-Rank 2SD602-Q 2SD602-R
Range
85~170
120~240
Marking Code
WQ1
WR1
2SD602-S 170~340
WS1
Product-Rank Range
Marking Code
2SD602A-Q 85~170 XQ
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NPN Transistor
2SD602
TRANSISTOR (NPN)
SOT 23
FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC Collector Current
500
PC Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
6
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2SD602A |
Silicon NPN epitaxial planer type
Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB710 and 2SB710A
Unit: mm
s Features
q q
2.8 0.3 0.65±0.15
+0.2
2.9 0.05
1.9±0.2
+0.2
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
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