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Datasheet 2SD1173 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SD1173 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1173
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Power Dissipation ·Wide Area of Safe Operation
APPLICATIONS ·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
V
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| SI NPN TRIPLE DIFFUSED JUNCTION MESA |
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2SD1 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SD1000 | NPN POWER TRANSISTOR / MINI MOLD
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| 2SD1001 | NPN SILICON EPITAXIAL TRANSISTOR
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| 2SD1005 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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| 2SD1006 | NPN Silicon Type Transistor
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| 2SD1010 | Silicon NPN epitaxial planer type(For low-frequency amplification)
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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