2SD1173 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1173 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Power Dissipation ·Wide Area of Safe Operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5V IC Collector Current- Conti