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Datasheet 2SC5463 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC5463 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5463
2SC5463
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Stora
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| Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5463
DESCRIPTION ·Low Noise Figure
NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GH- ·High Gain
S21e 2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz
APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base V
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| Trans GP BJT NPN 12V 0.06A 3-Pin USM |
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2SC5 Datasheet ( Hoja de datos ) - Resultados que coinciden |
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| 2SC5000 | NPN Transistor (POWER AMPLIFIER APPLICATIONS)
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| 2SC5001 | NPN Transistor
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| 2SC5002 | Silicon NPN Planar Transistor
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| 2SC5003 | Silicon NPN Planar Transistor
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| 2SC5004 | NPN SILICON EPITAXIAL TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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