2SC5463 PDF File ( Datasheet )

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5463 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GH- ·High Gain S21e 2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz APPLICATIONS ·Designed for use in VHF~ UHF band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 60 30 100 125 55~125