Datasheet 2SC535 Equivalent ( PDF ) - Transistor

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg R

2SC535 Silicon NPN Epitaxial Planar REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 Application VHF amplifier, mixer, local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications 2SC5352 Unit: mm Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB