2SC5352 PDF File ( Datasheet )

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications 2SC5352 Unit: mm Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base volta