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Datasheet 2SC2879 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC2879 | TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
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| NPN SILICON RF POWER TRANSISTOR 2SC2879
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° L A FULL R
FEATURES:
PG = 13 Typ. min. at 100 W, 28 MH- IMD3 = -24 dBc max. at 100 W(PEP) Omnigold™ Metalization System
E
C
Ø.125 NOM.
C B
B
E H D G F
E
MAXIMUM RATINGS
IC VCBO VC
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| 2SC2879A | SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2879A
2~30MH- SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm - - - - - Specified 12.5V, 28MH- Characteristics Output Power Power Gain Collector Efficiency : Po = 100WPEP : Gp = 13dB : ηC = 35% (Min.)
Intermodulation Distortion : IMD = 24dB(Max.) (MIL Standard)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CH
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2SC2 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SC2001 | Regulator
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| 2SC2021 | General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors
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| 2SC2023 | Silicon NPN Triple Diffused Planar Transistor
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| 2SC2053 | NPN EPITAXIAL PLANAR TYPE TRANSISTOR
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| 2SC2055 | NPN EPITAXIAL PLANAR TYPE TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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