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2SC2879 PDF File ( Datasheet )

Toshiba
2SC2879
RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN

PDF Datasheet
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2SC2879 Description
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)

Toshiba Semiconductor
Toshiba Semiconductor
NPN SILICON RF POWER TRANSISTOR

2SC2879 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: PG = 13 Typ. min. at 100 W, 28 MH- IMD3 = -24 dBc max. at 100 W(PEP) Omnigold™ Metalization System E C Ø.125 NOM. C B B E H D G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 25 A 45 V 18 V 4.0 V 250 W @ TC = 25 °C -65 °C to +175 °C -65 °C to +
ASI
ASI



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